Role of vapor pressure of 1,4-bis(trimethylsilyl)benzene in developing silicon carbide thin film using a plasma-assisted liquid injection chemical vapor deposition process

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dc.contributor.authorSelvakumar, J.
dc.contributor.authorSathiyamoorthy, D.
dc.contributor.authorNagaraja, K. S.
dc.date.accessioned2011-12-15T09:24:49Z
dc.date.available2011-12-15T09:24:49Z
dc.date.issued2011
dc.format.extent4163 bytes
dc.format.mimetypetext/html
dc.identifier.sourceSurface & Coatings Technology, 2011. Vol. 205 (11): pp. 3493-3498en
dc.identifier.urihttp://hdl.handle.net/123456789/5503
dc.language.isoenen
dc.subjectOrganosilane compounden
dc.subjectTranspiration techniqueen
dc.subjectVapor pressureen
dc.subjectPlasma-assisted CVDen
dc.subjectSilicon carbideen
dc.titleRole of vapor pressure of 1,4-bis(trimethylsilyl)benzene in developing silicon carbide thin film using a plasma-assisted liquid injection chemical vapor deposition processen
dc.typeArticleen

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