The temperature dependence equilibrium vapor pressure (p_e)_T data yielded a straight line when ln(p_e) was plotted against the reciprocal temperature in the range of 312.82–367.12 K, leading to a standard enthalpy of sublimation (Δ_subH°) value of 68.2±0.8 kJ mol⁻¹ for 1,4-bis(trimethylsilyl)benzene (TMSB). From the depression of the melting point in the DTA-mode, the standard enthalpy of fusion (Δ_fusH°) was found to be 26.9±2.5 kJ mol⁻¹. A thin film of silicon carbide was grown on graphite substrate at 573 K using TMSB or bis (trimethylsilyl)acetylene as precursors. The deposited films were characterized by scanning electron microscopy and  energy dispersive X-ray analysis for their composition and morphology.