Effects of high-energy proton implantation on the luminescence properties of InAs submonolayer quantum dots

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dc.contributor.authorUpadhyay, S.
dc.contributor.authorMandal, A.
dc.contributor.authorSubrahmanyam, N. B. V.
dc.contributor.authorSingh, P.
dc.contributor.authorShete, P.
dc.contributor.authorTongbram, B.
dc.contributor.authorChakrabarti, S.
dc.date.accessioned2016-12-13T09:15:37Z
dc.date.available2016-12-13T09:15:37Z
dc.date.issued2016
dc.description.divisionIADDen
dc.format.extent4828 bytes
dc.format.mimetypetext/html
dc.identifier.sourceJournal of Luminescence, 2016. Vol. 171: pp. 27-32en
dc.identifier.urihttp://hdl.handle.net/123456789/13775
dc.language.isoenen
dc.subjectIII–V Semiconductoren
dc.subjectIon implantationen
dc.subjectMolecular beam epitaxyen
dc.subjectPhotoluminescenceen
dc.subjectSubmonolayer quantum dotsen
dc.titleEffects of high-energy proton implantation on the luminescence properties of InAs submonolayer quantum dotsen
dc.typeArticleen

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