Effects of high-energy proton implantation on the luminescence properties of InAs submonolayer quantum dots

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Date

2016

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Abstract

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Keywords

III–V Semiconductor, Ion implantation, Molecular beam epitaxy, Photoluminescence, Submonolayer quantum dots

Source

Journal of Luminescence, 2016. Vol. 171: pp. 27-32

URI

http://hdl.handle.net/123456789/13775

Collections

2016