Here in, we demonstrate enhancement in photoluminescence (PL) efficiency  of InAs submonolayer quantum dots (QDs) resulting from high-energy proton implantation. To obtain optimum energy of protons, we initially varied the energy from 2MeV to 4.5MeV at a fixed  fluence  of 2x10¹² ions/cm².  At an optimum energy of 2.5MeV, we varied the proton dose from 8x10¹¹ to 1x10¹³ ions/cm² to obtain the best PL response. As compared to the as-grown sample, all implanted samples exhibited PL enhancement, attributed to passivation of non-radiative recombination centers and annihilation of defects, with a consistent blue shift, attributed to out-diffusion of In atoms from the dots. From the PL results, a model was proposed for explaining the material improvement of implanted sub monolayer QDs. All samples exhibited significant  enhancement in thermal activation energies, confirming that proton implantation improved material quality. Finally, MESA-shaped single-pixel N–i–N detectors were fabricated for both as grown and optimized samples (implanted with dose of 5x10¹² ions/cm² at an energy of 2.5MeV)to measure the temperature-dependent dark current variation. At a temperature of 77K and a bias of ~0.20 V, the dark current density of ~4.5x10^-4 A/cm² of as-grown device was suppressed by more than one order to ~6x10^-6 A/cm² for the optimized sample.