Transition fromn- to p-type conduction concomitant with enhancement of figure-of-merit in Pb doped bismuth telluride: Material to device development

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dc.contributor.authorBohra, A. K.
dc.contributor.authorBhatt, R.
dc.contributor.authorSingh, A.
dc.contributor.authorBhattacharya, S.
dc.contributor.authorBasu, R.
dc.contributor.authorMeshram, K. N.
dc.contributor.authorBhatt, P.
dc.contributor.authorPatro, P. K.
dc.contributor.authorAswal, D. K.
dc.contributor.authorMuthe, K. P.
dc.contributor.authorGadkari, S. C.
dc.date.accessioned2019-05-31T06:25:26Z
dc.date.available2019-05-31T06:25:26Z
dc.date.issued2018
dc.description.divisionTPD;SSPD;PMDen
dc.format.extent4626 bytes
dc.format.mimetypetext/html
dc.identifier.sourceMaterials and Design, 2018. Vol. 159: pp. 127-137en
dc.identifier.urihttp://hdl.handle.net/123456789/18578
dc.language.isoenen
dc.subjectThermoelectric power generationen
dc.subjectSeebeck effecten
dc.subjectFigure-of-meriten
dc.subjectDopingen
dc.subjectVacanciesen
dc.subjectElectrical contactsen
dc.titleTransition fromn- to p-type conduction concomitant with enhancement of figure-of-merit in Pb doped bismuth telluride: Material to device developmenten
dc.typeArticleen

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