Pressure induced structural, electronic topological, and semiconductor to metal transition in AgBiSe2

Simple item page
dc.contributor.authorRajaji, V.
dc.contributor.authorMalavi, P. S.
dc.contributor.authorYamijala, S. S. R. K. C.
dc.contributor.authorDutta, U.
dc.contributor.authorKarmakar, S.
dc.date.accessioned2018-04-09T06:44:51Z
dc.date.available2018-04-09T06:44:51Z
dc.date.issued2016
dc.description.divisionHP&SRPDen
dc.format.extent4744 bytes
dc.format.mimetypetext/html
dc.identifier.sourceApplied Physics Letters, 2016. Vol. 109: Article no. 171903en
dc.identifier.urihttp://hdl.handle.net/123456789/16014
dc.language.isoenen
dc.subjectPressure induced structural, electronic topological, and semiconductoren
dc.subjectmetal transitionen
dc.subjectAgBiSe2en
dc.subjectsynchrotron X-ray diffractionen
dc.subjectRaman scattering measurementen
dc.titlePressure induced structural, electronic topological, and semiconductor to metal transition in AgBiSe2en
dc.typeArticleen

Click here to download

Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
1485.htm
Size:
4.63 KB
Format:
Hypertext Markup Language
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.81 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

2016