Pressure induced structural, electronic topological, and semiconductor to metal transition in AgBiSe2

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Date

2016

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Keywords

Pressure induced structural, electronic topological, and semiconductor, metal transition, AgBiSe2, synchrotron X-ray diffraction, Raman scattering measurement

Source

Applied Physics Letters, 2016. Vol. 109: Article no. 171903

URI

http://hdl.handle.net/123456789/16014

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2016