A Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTs

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dc.contributor.authorHegde, V. N.
dc.contributor.authorPradeep, T. M.
dc.contributor.authorPushpa, N.
dc.contributor.authorBhushan, K. G.
dc.date.accessioned2019-06-03T06:16:25Z
dc.date.available2019-06-03T06:16:25Z
dc.date.issued2018
dc.description.divisionTPDen
dc.format.extent4312 bytes
dc.format.mimetypetext/html
dc.identifier.sourceIEEE Transactions on Device and Materials Reliability, 2018. Vol. 18 (4): Article no. 8486666en
dc.identifier.urihttp://hdl.handle.net/123456789/18624
dc.language.isoenen
dc.subjectSiGe HBTsen
dc.subjectIrradiationen
dc.subjectEB spacer oxideen
dc.subjectSTI oxideen
dc.subjectCurrent gain degradationen
dc.subjectIsochronal annealingen
dc.titleA Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTsen
dc.typeArticleen

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