A Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTs
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Date
2018
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Keywords
SiGe HBTs, Irradiation, EB spacer oxide, STI oxide, Current gain degradation, Isochronal annealing
Source
IEEE Transactions on Device and Materials Reliability, 2018. Vol. 18 (4): Article no. 8486666