Effect of argon ion activity on the properties of Y2O3 thin films deposited by low pressure PACVD

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dc.contributor.authorBarve, S. A.
dc.contributor.authorJagannath
dc.contributor.authorDeo, M. N.
dc.contributor.authorKishore, R.
dc.contributor.authorBiswas, A.
dc.contributor.authorGantayet, L. M.
dc.contributor.authorPatil, D. S.
dc.date.accessioned2011-03-29T05:03:17Z
dc.date.available2011-03-29T05:03:17Z
dc.date.issued2010
dc.format.extent4187 bytes
dc.format.mimetypetext/html
dc.identifier.sourceApplied Surface Science, 2010. Vol. 257 (1): pp. 215-221en
dc.identifier.urihttp://hdl.handle.net/123456789/4400
dc.language.isoenen
dc.subjectMicrowave ECR plasmaen
dc.subjectMOCVDen
dc.subjectThin filmsen
dc.subjectY2O3en
dc.subjectFAR-IRen
dc.subjectGIXRDen
dc.titleEffect of argon ion activity on the properties of Y2O3 thin films deposited by low pressure PACVDen
dc.typeArticleen

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