Interface mediated semiconducting to metallic like transition in ultrathin Bi2Se3 films on (100) SrTiO3 grown by molecular beam epitaxy

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dc.contributor.authorDebnath, A. K.
dc.contributor.authorPrasad, R.
dc.contributor.authorSingh, A.
dc.contributor.authorSamanta, S.
dc.contributor.authorAshwini Kumar
dc.contributor.authorBohra, A.
dc.contributor.authorBhattacharya, D.
dc.contributor.authorBasu, Saibal
dc.contributor.authorJoshi, N.
dc.contributor.authorAswal, D. K.
dc.contributor.authorGupta, S. K.
dc.date.accessioned2016-03-29T10:05:35Z
dc.date.available2016-03-29T10:05:35Z
dc.date.issued2015
dc.description.divisionTPD;SSPDen
dc.format.extent4372 bytes
dc.format.mimetypetext/html
dc.identifier.sourceRSC Advances, 2015. Vol. 5 (107): pp. 87897-87902en
dc.identifier.urihttp://hdl.handle.net/123456789/12731
dc.language.isoenen
dc.subjectultrathin Bi2Se3 filmsen
dc.subjectmolecular beam epitaxyen
dc.subjectBismuth selenide (Bi2Se3) thin filmsen
dc.subjectinverse square-root field dependenceen
dc.subjectelectrical conductivityen
dc.titleInterface mediated semiconducting to metallic like transition in ultrathin Bi2Se3 films on (100) SrTiO3 grown by molecular beam epitaxyen
dc.typeArticleen

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