Interface mediated semiconducting to metallic like transition in ultrathin Bi2Se3 films on (100) SrTiO3 grown by molecular beam epitaxy

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Date

2015

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Keywords

ultrathin Bi2Se3 films, molecular beam epitaxy, Bismuth selenide (Bi2Se3) thin films, inverse square-root field dependence, electrical conductivity

Source

RSC Advances, 2015. Vol. 5 (107): pp. 87897-87902

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