Interface mediated semiconducting to metallic like transition in ultrathin Bi2Se3 films on (100) SrTiO3 grown by molecular beam epitaxy
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Date
2015
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Keywords
ultrathin Bi2Se3 films, molecular beam epitaxy, Bismuth selenide (Bi2Se3) thin films, inverse square-root field dependence, electrical conductivity
Source
RSC Advances, 2015. Vol. 5 (107): pp. 87897-87902