Epitaxial growth and band alignment properties of NiO/GaN heterojunction for light emitting diode applications

Simple item page
dc.contributor.authorBaraik, K.
dc.contributor.authorSingh, S. D.
dc.contributor.authorYogesh Kumar
dc.contributor.authorAjimsha, R. S.
dc.contributor.authorMisra, P.
dc.contributor.authorJha, S. N.
dc.contributor.authorGanguli, T.
dc.date.accessioned2017-09-05T09:09:01Z
dc.date.available2017-09-05T09:09:01Z
dc.date.issued2017
dc.description.divisionA&MPDen
dc.format.extent4127 bytes
dc.format.mimetypetext/html
dc.identifier.sourceApplied Physics Letters, 2017. Vol. 110 (19): pp. 191603.1-191603.5en
dc.identifier.urihttp://hdl.handle.net/123456789/14840
dc.language.isoenen
dc.subjectEpitaxial growth and band alignment propertiesen
dc.subjectNiO/GaN heterojunctionen
dc.subjectlight emitting diode applicationsen
dc.subjectphotoemission spectroscopyen
dc.titleEpitaxial growth and band alignment properties of NiO/GaN heterojunction for light emitting diode applicationsen
dc.typeArticleen

Click here to download

Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
0116.htm
Size:
4.03 KB
Format:
Hypertext Markup Language
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.81 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

2017