Epitaxial growth and band alignment properties of NiO/GaN heterojunction for light emitting diode applications

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Date

2017

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Keywords

Epitaxial growth and band alignment properties, NiO/GaN heterojunction, light emitting diode applications, photoemission spectroscopy

Source

Applied Physics Letters, 2017. Vol. 110 (19): pp. 191603.1-191603.5

URI

http://hdl.handle.net/123456789/14840

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2017