Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETs

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dc.contributor.authorGnana Prakash, A. P.
dc.contributor.authorPradeep, T. M.
dc.contributor.authorHegde, V. N.
dc.contributor.authorBhushan, K. G.
dc.date.accessioned2020-11-03T06:19:38Z
dc.date.available2020-11-03T06:19:38Z
dc.date.issued2017
dc.description.divisionTPDen
dc.format.extent5041 bytes
dc.format.mimetypetext/html
dc.identifier.sourceRadiation Effects and Defects in Solids, 2017. Vol. 172 (11-12): pp. 952-963en
dc.identifier.urihttp://hdl.handle.net/123456789/21146
dc.language.isoenen
dc.subjectCurrent gainen
dc.subjecttransconductanceen
dc.subjectthreshold voltageen
dc.subjectinterface trapped chargeen
dc.subjectoxide trapped chargeen
dc.subjectmobilityen
dc.titleComparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETsen
dc.typeArticleen

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