Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETs

No Thumbnail Available

Click here to download

1513.htm (4.92 KB)

Date

2017

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

Keywords

Current gain, transconductance, threshold voltage, interface trapped charge, oxide trapped charge, mobility

Source

Radiation Effects and Defects in Solids, 2017. Vol. 172 (11-12): pp. 952-963

URI

http://hdl.handle.net/123456789/21146

Collections

2017