Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors

dc.contributor.authorPadma, N.
dc.contributor.authorMaheshwari, P.
dc.contributor.authorBhattacharya, D.
dc.contributor.authorTokas, R. B.
dc.contributor.authorSen, S.
dc.contributor.authorHonda, Y.
dc.contributor.authorBasu, Saibal
dc.contributor.authorPujari, P. K.
dc.contributor.authorChandrasekhar Rao, T. V.
dc.date.accessioned2016-06-24T06:14:38Z
dc.date.available2016-06-24T06:14:38Z
dc.date.issued2016
dc.description.divisionTPD;RCD;SSPD;A&MPDen
dc.format.extent4853 bytes
dc.format.mimetypetext/html
dc.identifier.sourceACS Applied Materials and Interfaces, 2016. Vol. 8 (5): pp. 3376-3385en
dc.identifier.urihttp://hdl.handle.net/123456789/13187
dc.language.isoenen
dc.subjectOFETen
dc.subjectsubstrate temperatureen
dc.subjectgrowth mode of CuPcen
dc.subjectthreshold voltage stabilityen
dc.subjectpositron annihilation spectroscopyen
dc.subjectX ray reflectivityen
dc.titleInvestigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistorsen
dc.typeArticleen

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