Boosting thermoelectric performance of p-type SiGe alloys through in-situ metallic YSi2 nano inclusions

dc.contributor.authorAhmad, S.
dc.contributor.authorSingh, A.
dc.contributor.authorBohra, A.
dc.contributor.authorBasu, R.
dc.contributor.authorBhattacharya, S.
dc.contributor.authorBhatt, R.
dc.contributor.authorMeshram, K. N.
dc.contributor.authorDebnath, A. K.
dc.contributor.authorAswal, D. K.
dc.contributor.authorGupta, S. K.
dc.date.accessioned2018-03-19T08:13:15Z
dc.date.available2018-03-19T08:13:15Z
dc.date.issued2016
dc.description.divisionTPD;ApSD;ChDen
dc.format.extent4617 bytes
dc.format.mimetypetext/html
dc.identifier.sourceNano Energy, 2016. Vol. 27: pp. 282-297en
dc.identifier.urihttp://hdl.handle.net/123456789/15819
dc.language.isoenen
dc.subjectThermoelectricsen
dc.subjectThermal conductivityen
dc.subjectNanoinclusionsen
dc.subjectCoherent interfacesen
dc.subjectTunnelingen
dc.subjectPhonon scatteringen
dc.titleBoosting thermoelectric performance of p-type SiGe alloys through in-situ metallic YSi2 nano inclusionsen
dc.typeArticleen

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