Annealing induced structural changes in sputtered AglnSbTe thin films and its implication on electrical properties

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dc.contributor.authorSingh, J.
dc.contributor.authorAswal, D. K.
dc.contributor.authorGupta, S. K.
dc.date.accessioned2016-05-05T09:53:25Z
dc.date.available2016-05-05T09:53:25Z
dc.date.issued2015
dc.description.divisionTPDen
dc.format.extent4359 bytes
dc.format.mimetypetext/html
dc.identifier.sourceMaterials Research Express, 2015. Vol. 2 (6): pp. 1-8: Article no. 066403en
dc.identifier.urihttp://hdl.handle.net/123456789/12983
dc.language.isoenen
dc.subjectAgInSbTeen
dc.subjectthin filmsen
dc.subjectRoom temperature crystalline resistivity 300Ken
dc.titleAnnealing induced structural changes in sputtered AglnSbTe thin films and its implication on electrical propertiesen
dc.typeArticleen

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