In this paper, were porton annealing temperature dependence of structural and electrical properties Of the AgInSbTe films. X-ray diffraction shows an amorphous phase for the as-deposited films, while mixed crystalline phase for the films annealed above 160 °C (rhombohedralSb/cubic AgSbTe2 and rhombohedral Sb/cubicAgInTe2 phases for the films annealed between 200°–350 °C and 350°–400 °C respectively). The room temperature resistivity of the annealed films decreases from a value of 7.51×10−4 to 5.32×10−4Ωcm with annealing temperature increasing from 200 °C to 300 °C, which is mainly due to large increase in mobility(3.4–7.3 cm2 Vs−1) of charge carriers in p-type film. This mobility improvement can be easily related to increase in scattering time of charge carriers attributed to better crystallization and thereby reduced scattering. The annealing of the films above 300 °C resulted in partial evaporation of the material and increase in resistivity.