Effect of lithium ion implantation on the luminescence properties of InAs/GaAs quantum dots

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dc.contributor.authorUpadhyay, S.
dc.contributor.authorSubrahmanyam, N. B. V.
dc.contributor.authorGupta, S. K.
dc.contributor.authorBhagwat, P.
dc.date.accessioned2018-03-22T06:37:59Z
dc.date.available2018-03-22T06:37:59Z
dc.date.issued2016
dc.description.divisionIADDen
dc.format.extent4245 bytes
dc.format.mimetypetext/html
dc.identifier.sourceProceedings of SPIE - The International Society for Optical Engineering, 2016. Vol. 9933: Article no. 993305en
dc.identifier.urihttp://hdl.handle.net/123456789/15880
dc.language.isoenen
dc.subjectIII-V Semiconductoren
dc.subjectIon Implantationen
dc.subjectMolecular Beam Epitaxyen
dc.subjectPhotoluminescenceen
dc.subjectLithium Ionen
dc.titleEffect of lithium ion implantation on the luminescence properties of InAs/GaAs quantum dotsen
dc.typeArticleen

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