Effect of lithium ion implantation on the luminescence properties of InAs/GaAs quantum dots

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Date

2016

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Keywords

III-V Semiconductor, Ion Implantation, Molecular Beam Epitaxy, Photoluminescence, Lithium Ion

Source

Proceedings of SPIE - The International Society for Optical Engineering, 2016. Vol. 9933: Article no. 993305

URI

http://hdl.handle.net/123456789/15880

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2016