Irradiation effects of 6MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors

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dc.contributor.authorLaha, P.
dc.contributor.authorBanerjee, I.
dc.contributor.authorBajaj, A.
dc.contributor.authorChakraborty, P.
dc.contributor.authorBarhai, P. K.
dc.contributor.authorDahiwale, S. S.
dc.contributor.authorDas, A. K.
dc.contributor.authorBhoraskar, V. N.
dc.contributor.authorKim, D.
dc.contributor.authorMahapatra, S. K.
dc.date.accessioned2013-03-13T09:47:47Z
dc.date.available2013-03-13T09:47:47Z
dc.date.issued2012
dc.description.divisionL&PTDen
dc.format.extent5000 bytes
dc.format.mimetypetext/html
dc.identifier.sourceRadiation Physics & Chemistry, 2012. Vol. 81 (10): pp. 1600-1605en
dc.identifier.urihttp://hdl.handle.net/123456789/7035
dc.language.isoenen
dc.subjectMOS deviceen
dc.subjectElectron irradiationen
dc.subjectInterface trapdensityen
dc.subjectFlat bandvoltageen
dc.subjectLeakage currenten
dc.subjectAl2O3en
dc.titleIrradiation effects of 6MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitorsen
dc.typeArticleen

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