Irradiation effects of 6MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors
No Thumbnail Available
Click here to download
Date
2012
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
MOS device, Electron irradiation, Interface trapdensity, Flat bandvoltage, Leakage current, Al2O3
Source
Radiation Physics & Chemistry, 2012. Vol. 81 (10): pp. 1600-1605