Comparison of 5 MeV proton and 1 MeV electron irradiation on silicon NPN rf power transistors

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dc.contributor.authorPradeep, T. M.
dc.contributor.authorHegde, V. N.
dc.contributor.authorPushpa, N.
dc.contributor.authorBhushan, K. G.
dc.date.accessioned2019-08-09T05:18:11Z
dc.date.available2019-08-09T05:18:11Z
dc.date.issued2018
dc.description.divisionThPDen
dc.format.extent4533 bytes
dc.format.mimetypetext/html
dc.identifier.sourceIndian Journal of Pure & Applied Physics, 2018. Vol. 56: pp. 646-649en
dc.identifier.urihttp://hdl.handle.net/123456789/19055
dc.language.isoenen
dc.subjectBipolar junction transistoren
dc.subjectProton irradiationen
dc.subjectElectron irradiationen
dc.subjectExcess base currenten
dc.subjectCurrent gainen
dc.titleComparison of 5 MeV proton and 1 MeV electron irradiation on silicon NPN rf power transistorsen
dc.typeArticleen

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