Comparison of 5 MeV proton and 1 MeV electron irradiation on silicon NPN rf power transistors

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Date

2018

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Keywords

Bipolar junction transistor, Proton irradiation, Electron irradiation, Excess base current, Current gain

Source

Indian Journal of Pure & Applied Physics, 2018. Vol. 56: pp. 646-649

URI

http://hdl.handle.net/123456789/19055

Collections

2018