High power factor of Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal grown by the vertical temperature gradient freezing method

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dc.contributor.authorOmprakash, M.
dc.contributor.authorArivanandhan, M.
dc.contributor.authorKoyama, T.
dc.contributor.authorAswal, D. K.
dc.contributor.authorBhattacharya, S.
dc.date.accessioned2015-10-23T10:15:07Z
dc.date.available2015-10-23T10:15:07Z
dc.date.issued2015
dc.description.divisionTPDen
dc.format.extent4814 bytes
dc.format.mimetypetext/html
dc.identifier.sourceCrystal Growth & Design, 2015. Vol. 15 (3): pp. 1380-1388en
dc.identifier.urihttp://hdl.handle.net/123456789/11752
dc.language.isoenen
dc.subjectHigh power factoren
dc.subjectGa-doped compositionally homogeneous Si0.68Ge0.32 bulk crystalen
dc.subjectvertical temperature gradient freezing methoden
dc.subjecthigh EPD regionen
dc.titleHigh power factor of Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal grown by the vertical temperature gradient freezing methoden
dc.typeArticleen

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