High power factor of Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal grown by the vertical temperature gradient freezing method

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Date

2015

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Keywords

High power factor, Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal, vertical temperature gradient freezing method, high EPD region

Source

Crystal Growth & Design, 2015. Vol. 15 (3): pp. 1380-1388

URI

http://hdl.handle.net/123456789/11752

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2015