Pressure-induced electronic topological transition in Sb2S3

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dc.contributor.authorSorb, Y. A.
dc.contributor.authorRajaji, V.
dc.contributor.authorMalavi, P. S.
dc.contributor.authorSubbarao, U.
dc.contributor.authorHalappa, P.
dc.contributor.authorPeter, S. C.
dc.contributor.authorKarmakar, S.
dc.contributor.authorNarayana, C.
dc.date.accessioned2016-09-22T05:08:07Z
dc.date.available2016-09-22T05:08:07Z
dc.date.issued2016
dc.description.divisionHP&SRPDen
dc.format.extent4405 bytes
dc.format.mimetypetext/html
dc.identifier.sourceJournal of Physics-Condensed Matter, 2016. Vol. 28: pp. 1-7: Article no. 015602en
dc.identifier.urihttp://hdl.handle.net/123456789/13367
dc.language.isoenen
dc.subjectelectronic topological transitionen
dc.subjecthigh pressureen
dc.subjectRaman spectroscopyen
dc.subjectresistivityen
dc.titlePressure-induced electronic topological transition in Sb2S3en
dc.typeArticleen

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