Pressure-induced electronic topological transition in Sb2S3

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Date

2016

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Abstract

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Keywords

electronic topological transition, high pressure, Raman spectroscopy, resistivity

Source

Journal of Physics-Condensed Matter, 2016. Vol. 28: pp. 1-7: Article no. 015602

URI

http://hdl.handle.net/123456789/13367

Collections

2016