Doping induced carrier and band-gap modulation in bulk versus nano for topological insulators: A test case of Stibnite

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dc.contributor.authorMaji, T. K.
dc.contributor.authorPal, S. K.
dc.contributor.authorKarmakar, D.
dc.date.accessioned2018-07-17T08:45:54Z
dc.date.available2018-07-17T08:45:54Z
dc.date.issued2018
dc.description.divisionTPDen
dc.format.extent3748 bytes
dc.format.mimetypetext/html
dc.identifier.sourceAIP Conference Proceedings, 2018. Vol. 1942: pp. 090029.1-090029.4en
dc.identifier.urihttp://hdl.handle.net/123456789/16552
dc.language.isoenen
dc.subjectDoping induced carrieren
dc.subjectband-gap modulationen
dc.subjectbulk versus nanoen
dc.subjecttopological insulatorsen
dc.subjectStibniteen
dc.titleDoping induced carrier and band-gap modulation in bulk versus nano for topological insulators: A test case of Stibniteen
dc.typeArticleen

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