Doping induced carrier and band-gap modulation in bulk versus nano for topological insulators: A test case of Stibnite

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Date

2018

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Keywords

Doping induced carrier, band-gap modulation, bulk versus nano, topological insulators, Stibnite

Source

AIP Conference Proceedings, 2018. Vol. 1942: pp. 090029.1-090029.4

URI

http://hdl.handle.net/123456789/16552

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2018