Effect of impinging ion energy on the substrates during deposition of SiOx films by radiofrequency plasma enhanced chemical vapor deposition process

Simple item page
dc.contributor.authorChoudhury, A. J.
dc.contributor.authorBarve, S. A.
dc.contributor.authorChutia, J.
dc.contributor.authorKakati, H.
dc.contributor.authorPal, A. R.
dc.contributor.authorJagannath
dc.contributor.authorMithal, N.
dc.contributor.authorKishore, R.
dc.contributor.authorPandey, M.
dc.contributor.authorPatil, D. S.
dc.date.accessioned2012-03-09T05:21:49Z
dc.date.available2012-03-09T05:21:49Z
dc.date.issued2011
dc.format.extent4907 bytes
dc.format.mimetypetext/html
dc.identifier.sourceThin Solid Films, 2011. Vol. 519 (22): pp. 7864-7870en
dc.identifier.urihttp://hdl.handle.net/123456789/5821
dc.language.isoenen
dc.subjectRF plasmaen
dc.subjectIon energyen
dc.subjectThin filmsen
dc.subjectPlasma diagnosticsen
dc.subjectSilicon oxideen
dc.subjectPlasma assisted chemical vapor depositionen
dc.subjectHexamethyldisiloxaneen
dc.titleEffect of impinging ion energy on the substrates during deposition of SiOx films by radiofrequency plasma enhanced chemical vapor deposition processen
dc.typeArticleen

Click here to download

Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
0857.htm
Size:
4.79 KB
Format:
Hypertext Markup Language
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.81 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

2011