Effects of precursor evaporation temperature on the properties of the yttrium oxide thin films deposited by microwave electron cyclotron resonance plasma assisted metal organic chemical vapor deposition

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dc.contributor.authorBarve, S. A.
dc.contributor.authorJagannath
dc.contributor.authorMithal, N.
dc.contributor.authorDeo, M. N.
dc.contributor.authorBiswas, A.
dc.contributor.authorMishra, R.
dc.contributor.authorKishore, R.
dc.contributor.authorBhanage, B. M.
dc.contributor.authorGantayet, L. M.
dc.contributor.authorPatil, D. S.
dc.date.accessioned2011-12-16T06:20:16Z
dc.date.available2011-12-16T06:20:16Z
dc.date.issued2011
dc.format.extent5043 bytes
dc.format.mimetypetext/html
dc.identifier.sourceThin Solid Films, 2011. Vol. 519 (10): pp. 3011-3020en
dc.identifier.urihttp://hdl.handle.net/123456789/5509
dc.language.isoenen
dc.subjectMicrowave electron cyclotron resonance plasmaen
dc.subjectMetal organic chemical vapor depositionen
dc.subjectThin filmsen
dc.subjectYttrium oxideen
dc.subjectFar-infrareden
dc.subjectThermogravimetryen
dc.titleEffects of precursor evaporation temperature on the properties of the yttrium oxide thin films deposited by microwave electron cyclotron resonance plasma assisted metal organic chemical vapor depositionen
dc.typeArticleen

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