Formation of non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts on reactively ion-etched n-type GaN by surface treatment for GaN light-emitting diodes applications

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dc.contributor.authorSingh, K.
dc.contributor.authorChauhan, A.
dc.contributor.authorMathew, M.
dc.contributor.authorMeena, S. S.
dc.contributor.authorGupta, N.
dc.date.accessioned2019-07-17T09:26:08Z
dc.date.available2019-07-17T09:26:08Z
dc.date.issued2019
dc.description.divisionSSPDen
dc.format.extent5224 bytes
dc.format.mimetypetext/html
dc.identifier.sourceApplied Physics-A, 2019. Vol. 125: Article no. 24en
dc.identifier.urihttp://hdl.handle.net/123456789/18860
dc.language.isoenen
dc.subjectnon-alloyed Ti/Al/Ni/Au low-resistance ohmic contactsen
dc.subjection-etched n-type GaNen
dc.subjectsurface treatmenten
dc.subjectGaN light-emitting diodes applicationsen
dc.titleFormation of non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts on reactively ion-etched n-type GaN by surface treatment for GaN light-emitting diodes applicationsen
dc.typeArticleen

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