Formation of non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts on reactively ion-etched n-type GaN by surface treatment for GaN light-emitting diodes applications

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Date

2019

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Keywords

non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts, ion-etched n-type GaN, surface treatment, GaN light-emitting diodes applications

Source

Applied Physics-A, 2019. Vol. 125: Article no. 24

URI

http://hdl.handle.net/123456789/18860

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2019