Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitors

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dc.contributor.authorLaha, P.
dc.contributor.authorBanerjee, I.
dc.contributor.authorBarhai, P. K.
dc.contributor.authorDas, A. K.
dc.contributor.authorBhoraskar, V. N.
dc.contributor.authorMahapatra, S. K.
dc.date.accessioned2012-11-16T09:18:15Z
dc.date.available2012-11-16T09:18:15Z
dc.date.issued2012
dc.description.divisionL&PTDen
dc.format.extent4727 bytes
dc.format.mimetypetext/html
dc.identifier.sourceNuclear Instruments & Methods in Physics Research-B, 2012. Vol. 283: pp. 9-14en
dc.identifier.urihttp://hdl.handle.net/123456789/6821
dc.language.isoenen
dc.subjectPoole–Frenkel coefficienten
dc.subjectFlat band voltageen
dc.subjectInterface trap densityen
dc.subjectSurface charge densityen
dc.titleEffects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitorsen
dc.typeArticleen

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