Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitors

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Date

2012

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Keywords

Poole–Frenkel coefficient, Flat band voltage, Interface trap density, Surface charge density

Source

Nuclear Instruments & Methods in Physics Research-B, 2012. Vol. 283: pp. 9-14

URI

http://hdl.handle.net/123456789/6821

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2012