Defect profiling in organic semiconductor multilayers

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dc.contributor.authorMaheshwari, P.
dc.contributor.authorPujari, P. K.
dc.contributor.authorSharma, S. K.
dc.contributor.authorSudarshan, K.
dc.contributor.authorDutta, D.
dc.contributor.authorSamanta, S.
dc.contributor.authorSingh, A.
dc.contributor.authorAswal, D. K.
dc.contributor.authorKumar, R. A.
dc.contributor.authorSamajdar, I.
dc.date.accessioned2012-12-18T06:25:13Z
dc.date.available2012-12-18T06:25:13Z
dc.date.issued2012
dc.description.divisionRCD;TPDen
dc.format.extent4750 bytes
dc.format.mimetypetext/html
dc.identifier.sourceOrganic Electronics, 2012. Vol. 13 (8): pp. 1409-1419en
dc.identifier.urihttp://hdl.handle.net/123456789/6910
dc.language.isoenen
dc.subjectPositron annihilation spectroscopyen
dc.subjectOrganic semiconductors heterostructuresen
dc.subjectInterfacesen
dc.subjectDefectsen
dc.titleDefect profiling in organic semiconductor multilayersen
dc.typeArticleen

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