Microwave ECR Plasma Assisted MOCVD of Y2O3 Thin Films Using Y(tod)3 Precursor and Their Characterization

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dc.contributor.authorBarve, S.
dc.contributor.authorDeo, M.
dc.contributor.authorKar, R.
dc.contributor.authorSreenivasan, N.
dc.contributor.authorKishore, R.
dc.contributor.authorBiswas, A.
dc.contributor.authorBhanage, B.
dc.contributor.authorRao, M.
dc.contributor.authorGantayet, L. M.
dc.contributor.authorPatil, D.
dc.date.accessioned2012-01-18T09:43:54Z
dc.date.available2012-01-18T09:43:54Z
dc.date.issued2011
dc.format.extent4607 bytes
dc.format.mimetypetext/html
dc.identifier.sourcePlasma Processes and Polymers, 2011. Vol. 8 (8): pp. 740-749en
dc.identifier.urihttp://hdl.handle.net/123456789/5708
dc.language.isoenen
dc.subjectMicrowave ECR Plasmaen
dc.subjectMOCVDen
dc.subjectY2O3 Thin Filmsen
dc.subjectYttrium oxideen
dc.subjectmetal organic chemical vapour depositionen
dc.subjectX-ray photoelectron spectroscopyen
dc.titleMicrowave ECR Plasma Assisted MOCVD of Y2O3 Thin Films Using Y(tod)3 Precursor and Their Characterizationen
dc.typeArticleen

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