Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure

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dc.contributor.authorLaha, P.
dc.contributor.authorPanda, A. B.
dc.contributor.authorDahiwale, S.
dc.contributor.authorDate, K.
dc.contributor.authorPatil, K. R.
dc.contributor.authorBarhai, P. K.
dc.contributor.authorDas, A. K.
dc.contributor.authorBanerjee, I.
dc.contributor.authorMahapatra, S. K.
dc.date.accessioned2011-06-21T05:43:41Z
dc.date.available2011-06-21T05:43:41Z
dc.date.issued2010
dc.format.extent5099 bytes
dc.format.mimetypetext/html
dc.identifier.sourceThin Solid Films. Vol. 519 (5): pp. 1530-1535en
dc.identifier.urihttp://hdl.handle.net/123456789/4931
dc.language.isoenen
dc.subjectLeakage currenten
dc.subjectDielectric constanten
dc.subjectPoole–Frenkel emissionen
dc.subjectSchottky emissionen
dc.subjectAl2O3en
dc.subjectTiO2en
dc.subjectMOS deviceen
dc.titleEffect of leakage current and dielectric constant on single and double layer oxides in MOS structureen
dc.typeArticleen

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