Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure

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Date

2010

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Keywords

Leakage current, Dielectric constant, Poole–Frenkel emission, Schottky emission, Al2O3, TiO2, MOS device

Source

Thin Solid Films. Vol. 519 (5): pp. 1530-1535

URI

http://hdl.handle.net/123456789/4931

Collections

2010