Pressure induced structural, electronic topological, and semiconductor to metal transition in AgBiSe2

Rajaji, V.Malavi, P. S.Yamijala, S. S. R. K. C.Dutta, U.Karmakar, S.2018-04-092018-04-092016Applied Physics Letters, 2016. Vol. 109: Article no. 171903http://hdl.handle.net/123456789/160144744 bytestext/htmlenPressure induced structural, electronic topological, and semiconductormetal transitionAgBiSe2synchrotron X-ray diffractionRaman scattering measurementPressure induced structural, electronic topological, and semiconductor to metal transition in AgBiSe2Article