Hegde, V. N.Pradeep, T. M.Pushpa, N.Bhushan, K. G.2019-06-032019-06-032018IEEE Transactions on Device and Materials Reliability, 2018. Vol. 18 (4): Article no. 8486666http://hdl.handle.net/123456789/186244312 bytestext/htmlenSiGe HBTsIrradiationEB spacer oxideSTI oxideCurrent gain degradationIsochronal annealingA Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTsArticle