Barve, S. A.JagannathDeo, M. N.Kishore, R.Biswas, A.Gantayet, L. M.Patil, D. S.2011-03-292011-03-292010Applied Surface Science, 2010. Vol. 257 (1): pp. 215-221http://hdl.handle.net/123456789/44004187 bytestext/htmlenMicrowave ECR plasmaMOCVDThin filmsY2O3FAR-IRGIXRDEffect of argon ion activity on the properties of Y2O3 thin films deposited by low pressure PACVDArticle