Interface mediated semiconducting to metallic like transition in ultrathin Bi2Se3 films on (100) SrTiO3 grown by molecular beam epitaxy

Debnath, A. K.Prasad, R.Singh, A.Samanta, S.Ashwini KumarBohra, A.Bhattacharya, D.Basu, SaibalJoshi, N.Aswal, D. K.Gupta, S. K.2016-03-292016-03-292015RSC Advances, 2015. Vol. 5 (107): pp. 87897-87902http://hdl.handle.net/123456789/127314372 bytestext/htmlenultrathin Bi2Se3 filmsmolecular beam epitaxyBismuth selenide (Bi2Se3) thin filmsinverse square-root field dependenceelectrical conductivityInterface mediated semiconducting to metallic like transition in ultrathin Bi2Se3 films on (100) SrTiO3 grown by molecular beam epitaxyArticle