Electronic topological transition in AuX2 (X = In, Ga and Al) compounds at high pressures

Garg, A. B.Godwal, B. K.Meenakshi, S.Modak, P.Rao, R. S.Sikka, S. K.Vijayakumar, V.2019-09-302019-09-302002Journal of Physics Condensed Matter, 2002. Vol. 14 (44 SPEC ISS): pp. 10605-10608http://hdl.handle.net/123456789/195963900 bytestext/htmlenElectronic topological transitionhigh pressuresaccurate x-ray diffraction dataELETTRA synchrotron sourceElectronic topological transition in AuX2 (X = In, Ga and Al) compounds at high pressuresArticle