Epitaxial growth and band alignment properties of NiO/GaN heterojunction for light emitting diode applications

Baraik, K.Singh, S. D.Yogesh KumarAjimsha, R. S.Misra, P.Jha, S. N.Ganguli, T.2017-09-052017-09-052017Applied Physics Letters, 2017. Vol. 110 (19): pp. 191603.1-191603.5http://hdl.handle.net/123456789/148404127 bytestext/htmlenEpitaxial growth and band alignment propertiesNiO/GaN heterojunctionlight emitting diode applicationsphotoemission spectroscopyEpitaxial growth and band alignment properties of NiO/GaN heterojunction for light emitting diode applicationsArticle