Comparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N

Gnana Prakash, A. P.Pradeep, T. M.Hegde, V. N.Bhushan, K. G.2020-11-032020-11-032017Radiation Effects and Defects in Solids, 2017. Vol. 172 (11-12): pp. 952-963http://hdl.handle.net/123456789/211465041 bytestext/htmlenCurrent gaintransconductancethreshold voltageinterface trapped chargeoxide trapped chargemobilityComparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N–channel depletion MOSFETsArticle